CMOS 130HP

  • Number of polysilicon layers  1.
  • Number of copper metallization layers (Cu)  6-9.
  • 1.5 V core supply voltage.
  • 2.5 V or 3.3 V I/O supply voltage.
  • Standard threshold voltage transistors (SVt).
  • Low threshold voltage transistors (LVt).
  • Polysilicon and diffused resistors, RMS Poly resistor.
  • Straight-line capacitor (MOM).

Transistor parameters

Process name Transistor type Supply voltage, [V] Gate oxide thickness, [Tox,A] Saturation current (Idsat),
[μA/μm]
Leakage current (Idoff), [nA/μm] Threshold voltage (Vt_lin), [V] Threshold voltage (Vt_sat), [V]
NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS
AT130LP SVt 1.5 26 500 220 7 7 0.55 0.48 0.45 0.40
LVt 1.5 tbd tbd tbd tbd tbd tbd tbd tbd